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Advance Product Information
September 19, 2005
DC - 20 GHz Discrete power pHEMT
* * * * * * * *
TGF2022-06
Key Features and Performance
Frequency Range: DC - 20 GHz > 28 dBm Nominal Psat 58% Maximum PAE 36 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 0.6mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 45-75mA (Under RF Drive, Id rises from 45mA to 150mA) Chip Dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in)
Product Description
The TriQuint TGF2022-06 is a discrete 0.6 mm pHEMT which operates from DC-20 GHz. The TGF2022-06 is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2022-06 typically provides > 28 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-06 appropriate for high efficiency applications.
*
Primary Applications
* * * * * Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications
35 30
Maximum Gain (dB)
25 20
The TGF2022-06 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-06 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant
MSG MAG
15 10 5 0 0 2 4 6 8 10 12 14 16
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TABLE I MAXIMUM RATINGS Symbol
V+ V I
+
TGF2022-06
Value
12.5 V -5V to 0V 282 mA 7 mA 23 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes
2/
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 138.0 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal)
Symbol Idss Gm VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum -1.5 -30 -30 Typical 180 225 -1 Maximum -0.5 -14 -14 Unit mA mS V V V
Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2022-06
TABLE III RF CHARACTERIZATION TABLE
(TA = 25 C, Nominal) SYMBOL
Power Tuned: Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient
PARAMETER
f = 10 GHz
Vd = 10V Idq = 45 mA 28.9 52.4 12.9 44.63 0.276 0.382 120.1 Vd = 12V Idq = 45 mA 29.6 51.9 12.9 56.99 0.257 0.400 104.7
f = 18 GHz
Vd = 10V Idq = 45 mA 28.1 41.5 8.3 43.55 0.415 0.522 127.7 Vd = 12V Idq = 45 mA 28.7 37.0 8.0 48.44 0.432 0.556 125.1
UNITS
Psat PAE Gain Rp 1/ Cp 1/ L 2/ Efficiency Tuned: Psat PAE Gain Rp 1/ Cp 1/ L 2/ OIP3
dBm % dB pF -
Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient Output TOI
28.3 58.3 13 72.49 0.252 0.455 93.7 37
29.3 56.0 13 74.22 0.255 0.466 93.4 36
27.5 46.0 8.5 51.30 0.495 0.619 127.3 37
28.1 42.5 8.3 66.97 0.503 0.680 123.0 36
dBm % dB pF dBm
1/ Large signal equivalent pHEMT output network 2/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz. The series resistance and inductance (Rd and Ld) shown in the Figure on page 7 is excluded
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance
(channel to backside of carrier)
TGF2022-06
Test Conditions
Vd = 12 V Idq = 45 mA Pdiss = 0.54 W
T CH (oC)
145
TJC (qC/W)
138
TM (HRS)
1.6 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature.
Measured Fixtured Data
IMD3 vs. output power/tone at 10 & 18 GHz
0 -10 -20
18 GHz, Vd=12V, Id=45mA 18 GHz, Vd=10V, Id=45mA 10 GHz, Vd=12V,Id=45mA 10 GHz, Vd=10V, Id=45mA
IMD3 (dBc)
-30 -40 -50 -60 -70 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Output power/tone (dBm)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2022-06
Measured Fixtured Data
Power tuned data at 10GHz
32 30 28
Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA
150 140 130
Gain (dB)
Pout (dBm)
26 24 22 20 18 16 14 12 10 8 9 10 11 12 13 14 15 16 17 18 19 20
120
110 100 90 80 70 60 50
19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 8
62
Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA
58 54 50 46
Id (mA)
PAE (%)
42 38 34 30 26 22 18 14 10 9 10 11 12 13 14 15 16 17 18 19 20
Input Power (dBm)
Input Power (dBm)
For power tuned devices at 10GHz Input matched for maximum gain & output load is: Vd=12V, Idq=45mA: Rp = 57.0 , Cp = 0.257pF, = 0.400, = 104.7 Vd=10V, Idq=75mA: Rp = 44.6 , Cp = 0.276pF, = 0.382, = 120.1
Efficiency tuned data at 10GHz
38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 9 180 170 160 150 140 130 120 110 100 90 80 70 60 50 14 15 16 17 18 19 20
19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 8 62
Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA
Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA
58 54 50 46
Pout (dBm)
Gain (dB)
PAE (%)
42 38 34 30 26 22 18 14 10 9 10 11 12 13 14 15 16 17 18 19 20
Id (mA)
10
11
12
13
Input Power (dBm)
Input Power (dBm)
For efficiency tuned devices at 10GHz: Input matched for maximum gain & output load is: Vd=12V, Idq=45mA: Rp = 74.2 , Cp = 0.255pF, = 0.466, = 93.4 Vd=10V, Idq=45mA: Rp = 72.5 , Cp = 0.252pF, = 0.455, = 93.7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2022-06
Measured Fixtured Data
Power tuned data at 18GHz
32 30 28
Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA
150 140 130
14 13 12 11
Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA
46 43 40 37 34 31 28 25 22 19 16 13 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Pout (dBm)
Gain (dB)
26 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
120
10 9 8 7 6 5 4 3 2
Id (mA)
PAE (%)
110 100 90 80 70 60 50
Input Power (dBm)
Input Power (dBm)
For power tuned devices at 18GHz Input matched for maximum gain & output load is: Vd=12V, Idq=45mA: Rp = 48.4 , Cp = 0.432pF, = 0. 556, = 125.1 Vd=10V, Idq=75mA: Rp = 43.5 , Cp = 0.415pF, = 0.522, = 127.7
Efficiency tuned data at 18GHz
30 28 26
Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA
140 130 120
14 13 12 11 10 9 8 7 6 5 4 3 2 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA
54 50 46 42
Pout (dBm)
24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Gain (dB)
110 100 90 80 70 60 50
PAE (%)
38 34 30 26 22 18 14 10
Id (mA)
Input Power (dBm)
Input Power (dBm)
For efficiency tuned devices at 18GHz: Input matched for maximum gain & output load is: Vd=12V, Idq=45mA: Rp = 67.0 , Cp = 0.503pF, = 0.680, = 123.0 Vd=10V, Idq=45mA: Rp = 51.3 , Cp = 0.495pF, = 0.619, = 127.3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
Linear Model for 0.6 mm Unit pHEMT cell
Rdg Lg Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2022-06
vi
-
Ls
Rp, Cp
8QLW S+(07 FHOO 5HIHUHQFH 3ODQH
Rs
Source Gate Drain
UPC
Source Source
Source
UPC = 0.6mm Unit pHEMT Cell
L - via = 0.0135 nH (2x)
MODEL PARAMETER
Rg Rs Rd gm Cgs Ri Cds Rds Cgd Tau Ls Lg Ld Rgs Rgd
Vd = 8V Idq = 45mA
0.22 0.40 0.51 0.195 1.50 1.65 0.115 243.14 0.072 5.94 0.001 0.108 0.121 5110 57700
Vd = 8V Idq = 60mA
0.23 0.41 0.52 0.202 1.63 1.59 0.115 247.08 0.066 6.23 0.001 0.108 0.120 5140 64800
Vd = 8V Idq = 75mA
0.24 0.41 0.52 0.202 1.70 1.58 0.116 255.12 0.063 6.51 0.001 0.108 0.118 8310 74400
Vd = 10V Idq = 45mA
0.23 0.46 0.50 0.188 1.64 1.72 0.114 278.72 0.064 6.85 0.001 0.108 0.118 5110 79400
Vd = 10V Idq = 60mA
0.24 0.45 0.50 0.195 1.73 1.64 0.115 279.31 0.061 6.95 0.001 0.108 0.118 5420 82900
Vd = 12V Idq = 45mA
0.24 0.50 0.48 0.183 1.71 1.73 0.114 302.49 0.060 7.36 0.001 0.108 0.117 5120 82300
UNITS
S pF pF pF pS nH nH nH
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
Unmatched S-parameters for 0.6 mm pHEMT
Bias Conditions: Vd = 12V, Idq = 45mA
TGF2022-06
Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.241 -36.34 22.678 159.08 -35.863 70.86 -2.990 -12.01 1 -0.419 -66.76 21.503 141.50 -31.020 55.18 -3.802 -21.21 1.5 -0.587 -89.70 20.058 128.01 -28.948 43.57 -4.700 -27.22 2 -0.712 -106.49 18.609 117.76 -27.903 35.20 -5.480 -31.06 2.5 -0.798 -118.92 17.260 109.77 -27.322 29.07 -6.093 -33.71 3 -0.857 -128.35 16.035 103.28 -26.972 24.45 -6.554 -35.80 3.5 -0.898 -135.70 14.930 97.82 -26.750 20.86 -6.896 -37.68 4 -0.928 -141.60 13.930 93.08 -26.602 17.99 -7.146 -39.51 4.5 -0.949 -146.44 13.022 88.85 -26.501 15.64 -7.327 -41.37 5 -0.964 -150.49 12.193 85.01 -26.430 13.67 -7.457 -43.31 5.5 -0.976 -153.95 11.432 81.46 -26.380 11.99 -7.547 -45.31 6 -0.985 -156.94 10.730 78.12 -26.345 10.54 -7.606 -47.40 6.5 -0.992 -159.58 10.079 74.97 -26.321 9.26 -7.641 -49.54 7 -0.997 -161.92 9.473 71.95 -26.305 8.13 -7.657 -51.75 7.5 -1.001 -164.03 8.905 69.05 -26.295 7.11 -7.657 -54.01 8 -1.004 -165.94 8.373 66.25 -26.290 6.19 -7.643 -56.31 8.5 -1.007 -167.69 7.872 63.52 -26.290 5.35 -7.618 -58.64 9 -1.008 -169.30 7.399 60.86 -26.293 4.59 -7.584 -61.01 9.5 -1.010 -170.80 6.950 58.25 -26.298 3.88 -7.541 -63.39 10 -1.010 -172.20 6.524 55.69 -26.307 3.22 -7.491 -65.79 10.5 -1.011 -173.52 6.119 53.18 -26.317 2.61 -7.435 -68.21 11 -1.011 -174.76 5.733 50.70 -26.328 2.04 -7.373 -70.63 11.5 -1.011 -175.94 5.363 48.25 -26.342 1.51 -7.306 -73.06 12 -1.010 -177.06 5.010 45.84 -26.357 1.01 -7.234 -75.49 12.5 -1.010 -178.13 4.670 43.44 -26.373 0.53 -7.158 -77.92 13 -1.009 -179.15 4.344 41.07 -26.390 0.09 -7.078 -80.35 13.5 -1.008 179.86 4.031 38.72 -26.408 -0.33 -6.995 -82.78 14 -1.007 178.91 3.728 36.39 -26.426 -0.72 -6.909 -85.19 14.5 -1.006 177.99 3.436 34.07 -26.446 -1.10 -6.819 -87.60 15 -1.004 177.10 3.154 31.77 -26.466 -1.45 -6.728 -90.00 15.5 -1.003 176.24 2.881 29.49 -26.486 -1.79 -6.633 -92.39 16 -1.001 175.40 2.616 27.21 -26.507 -2.10 -6.537 -94.76 16.5 -0.999 174.58 2.359 24.95 -26.529 -2.40 -6.439 -97.13 17 -0.998 173.79 2.109 22.70 -26.551 -2.69 -6.339 -99.48 17.5 -0.996 173.01 1.866 20.46 -26.572 -2.95 -6.238 -101.81 18 -0.994 172.24 1.629 18.23 -26.595 -3.21 -6.135 -104.13 18.5 -0.992 171.50 1.398 16.01 -26.617 -3.45 -6.031 -106.44 19 -0.989 170.76 1.173 13.79 -26.639 -3.67 -5.926 -108.72 19.5 -0.987 170.04 0.953 11.58 -26.661 -3.88 -5.820 -111.00 20 -0.985 169.34 0.737 9.38 -26.683 -4.08 -5.713 -113.25 20.5 -0.982 168.64 0.526 7.19 -26.705 -4.27 -5.606 -115.49 21 -0.980 167.96 0.319 5.00 -26.726 -4.45 -5.498 -117.71 21.5 -0.977 167.28 0.115 2.82 -26.748 -4.61 -5.390 -119.91 22 -0.975 166.61 -0.085 0.64 -26.769 -4.77 -5.281 -122.09 22.5 -0.972 165.96 -0.281 -1.53 -26.789 -4.91 -5.173 -124.26 23 -0.970 165.31 -0.475 -3.69 -26.809 -5.04 -5.064 -126.41 23.5 -0.967 164.67 -0.666 -5.85 -26.829 -5.17 -4.956 -128.54 24 -0.964 164.03 -0.854 -8.01 -26.848 -5.29 -4.848 -130.65 24.5 -0.961 163.41 -1.040 -10.16 -26.866 -5.39 -4.740 -132.75 25 -0.958 162.79 -1.224 -12.31 -26.884 -5.49 -4.632 -134.82 25.5 -0.955 162.18 -1.406 -14.45 -26.901 -5.58 -4.525 -136.88 26 -0.952 161.57 -1.586 -16.59 -26.917 -5.67 -4.419 -138.92
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September 19, 2005
TGF2022-06 Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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September 19, 2005
TGF2022-06
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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